Journal Publication by ESR1 (co-author) | “Gate-Tunable Spin Hall Effect in an All-Light-Element Heterostructure: Graphene with Copper Oxide” Haozhe Yang, Maider Ormaza, Zhendong Chi, Eoin Dolan, Josep Ingla-Aynés, C.K. Safeer, Franz Herling, Nerea Ontoso, Marco Gobbi, Beatriz Martín-García, Frederik Schiller, Luis E. Hueso, and Fèlix Casanova. Nano Lett. 23, 10, 4406–4414 (2023) DOI:10.1021/acs.nanolett.3c00687 Deposited in arXiv: DOI:10.48550/arXiv.2305.01787 |
Journal Publication by ESR10 (first author) | “Biskyrmion-based artificial neuron” I. Ribeiro de Assis, I. Mertig and B. Göbel. Neuromorph. Comput. Eng., 3, 1014012 (2023) DOI:10.1088/2634-4386/acb841 Deposited in arXiv: DOI:10.48550/arXiv.2209.11017 |
Journal Publication by ESR8 (co-author) | “Electrical measurement of the spin Hall effect isotropy in ferromagnets with strong spin-orbit interactions” M. Cosset-Chéneau, M. Husien Fahmy, A. Kandazoglou, C. Grezes, A. Brenac, S. Teresi, P. Sgarro, P. Warin, A. Marty, V. T. Pham, J.-P. Attané, and L. Vila. Phys. Rev. B 106, L220405 (2022) DOI:DOI:10.1103/PhysRevB.106.L220405 Deposited in arXiv: DOI: 10.48550/arXiv.2205.15651 |
Journal Publication by ESR7 (co-author) | “Electrical measurement of the spin Hall effect isotropy in ferromagnets with strong spin-orbit interactions” M. Cosset-Chéneau, M. Husien Fahmy, A. Kandazoglou, C. Grezes, A. Brenac, S. Teresi, P. Sgarro, P. Warin, A. Marty, V. T. Pham, J.-P. Attané, and L. Vila. Phys. Rev. B 106, L220405 (2022) DOI:10.1103/PhysRevB.106.L220405 Deposited in arXiv: DOI: 10.48550/arXiv.2205.15651 |
Conference Proceeding by ESR5 (co-author) | “First demonstration of field-free perpendicular SOT-MRAM for ultrafast and high-density embedded memories” K. Cai, G Talmelli, K Fan, S Van Beek, V Kateel, M Gupta, MG Monteiro, M Ben Chroud, G Jayakumar, A Trovato, S Rao, GS Kar, S Couet. 2022 International Electron Devices Meeting (IEDM), San Francisco, CA, USA, 2022, pp. 36.2.1-36.2.4. DOI: 10.1109/IEDM45625.2022.10019360 |
Journal Publication by ESR3 (co-author) | “Tailoring the Switching Efficiency of Magnetic Tunnel Junctions by the Fieldlike Spin-Orbit Torque”. Viola Krizakova, Marco Hoffmann, Vaishnavi Kateel, Siddharth Rao, Sebastien Couet, Gouri Sankar Kar, Kevin Garello, and Pietro Gambardella. Phys. Rev. Applied 18, 4, 044070 (2022). DOI:10.1103/PhysRevApplied.18.044070 Deposited in arXiv: https://arxiv.org/abs/2206.14587 |
Journal Publication by ESR7 (co-author) | “Bilinear magnetoresistance in HgTe topological insulator: opposite signs at opposite surfaces demonstrated by gate control” Yu Fu; Jing Li; Jules Papin; Paul Noël; Salvatore Teresi; Maxen Cosset-Chéneau; Cécile Grezes; Thomas Guillet; Candice Thomas; Yann-Michel Niquet; Philippe Ballet; Tristan Meunier; Jean-Philippe Attané; Albert Fert; Laurent Vila. Nano Lett. 22, 19, 7867–7873 (2022) DOI:10.1021/acs.nanolett.2c02585 Deposited in arXiv. DOI:10.48550/arXiv.2111.15594. |